Samsung Electronics has now officially introduced its 36GB HBM3E 12H DRAM in the market. The HBM3E 12H has achieved the largest ever HBM or high bandwidth memory capacity and consists of a 12-layer stack. A 50% raised performance and capacity can thus be expected from it.
Here’s more about it.
Samsung’s 36GB HBM3E 12H DRAM
The newly developed HBM3E 12H of Samsung is considered to be the first 12-stack HBM3E DRAM and also has the highest-capacity HBM till date. It provides a high bandwidth of 1,280 GB/s (up to) and has a 36GB capacity. As mentioned, the HBM3E compared to the previous HBM3 8H offers 50% more bandwidth speed and high capacity.
Speaking more, to meet with the current HBM package requirements, Samsung has applied advanced thermal compression non-conductive film on the HBM3E that helps in maintaining the same height as on the HBM3 8H. Samsung has also successfully reduced the thickness of NCF materials with the smallest gap of just seven micrometers between the chips. Eliminating voids from between the layers and enhanced vertical density by over 20% are also some notable changes. Also to add, the thermal properties have also been improved with more heat dissipation, thereby increasing the performance stability.
Samsung believes that in the current scenario when the application of AI and its services are growing exponentially, the HBM3E 12H will be a better option or solution thanks to its high performance and high capacity. Replacing it with the previous HBM3 8H, the AI training average speed will receive a 34% increase. The number of simultaneous inference services will also be expanded to more than 11.5 times too.
The HBM3E 12H sampling are already being given to customers, whereas the mass production of it is scheduled to commence at the first half of 2024, this year.
Samsung Develops Industry-First 36GB HBM3E 12H DRAMhttps://t.co/9Cm3MzwP22
— Samsung Electronics (@Samsung) February 27, 2024
